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| NTR1P02T1 Power MOSFET -20 V, -1 A, P-Channel SOT-23 Package Features * Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life RDS(on) = 0.180 W, VGS = -10 V RDS(on) = 0.280 W, VGS = -4.5 V Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space Mounting Information for SOT-23 Package Provided http://onsemi.com * * * * * * * * V(BR)DSS -20 V RDS(on) TYP 148 mW @ -10 V ID MAX -1.0 A Applications P-Channel D DC-DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 1 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VGS ID IDM PD TJ, Tstg RqJA TL Value -20 20 -1.0 -2.67 400 - 55 to 150 300 260 mW C C/W C P2 W Unit V V A 1 2 SOT-23 CASE 318 STYLE 21 3 S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain P2W 1 Gate 2 Source = Specific Device Code = Work Week Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device NTR1P02T1 NTR1P02T3 Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 July, 2004 - Rev. 3 Publication Order Number: NTR1P02T1/D NTR1P02T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = -10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = -20 V, VGS = 0 V, TJ = 25C) (VDS = -20 V, VGS = 0 V, TJ = 150C) Gate-Body Leakage Current (VGS = 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-State Resistance (VGS = -10 V, ID = -1.5 A) (VGS = -4.5 V, ID = -0.75 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Rise Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Turn-Off Delay Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Fall Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Total Gate Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) Gate-Source Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) Gate-Drain Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) BODY-DRAIN DIODE RATINGS (Note 1) Diode Forward On-Voltage (Note 2) (IS = -0.6 A, VGS = 0 V) (IS = -0.6 A, VGS = 0 V, TJ = 150C) Reverse Recovery Time (IS = -1 A, dIS/dt = 100 A/ 1A A/ms, VGS = 0 V) VSD -0.8 -0.6 trr ta tb Reverse Recovery Stored Charge (IS = -1 A, dIS/dt = 100 A/ms, VGS = 0 V) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. QRR 13.5 10.5 3.0 0.008 mC -1.0 ns V td(on) tr td(off) tf Qtot Qgs Qgd 7.0 9.0 9.0 3.0 2.5 0.75 1.0 nC ns Ciss Coss Crss 165 110 35 pF VGS(th) -1.1 RDS(on) 0.148 0.235 0.180 0.280 -1.9 -4.0 -2.3 V mV/C W V(BR)DSS -20 32 IDSS -1.0 -10 IGSS 100 nA V mV/C mA Symbol Min Typ Max Unit http://onsemi.com 2 NTR1P02T1 2.5 -ID, DRAIN CURRENT (AMPS) 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 VGS = -2.5 V 1.5 0.75 1 1.75 0.25 0.5 1.25 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 -3 V -4.5 V -4 V -3.5 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 2 1.75 1.5 1.25 1 0.75 TJ = 125C 0.5 0.25 0 1 2.5 3 3.5 1.5 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 TJ = -40C VDS -10 V TJ = 25C Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -ID, DRAIN CURRENT (AMPS) TJ = 25C TJ = -40C VGS = -4.5 V TJ = 150C 0.275 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -ID, DRAIN CURRENT (AMPS) TJ = -40C TJ = 25C VGS = -10 V TJ = 150C Figure 3. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 ID = -1.5 A VGS = -10 V 1000 Figure 4. On-Resistance versus Drain Current and Temperature VGS = 0 V -IDSS, LEAKAGE (nA) 2 TJ = 150C 100 1.5 TJ = 125C 10 1 0.5 0 -45 1 -20 5 30 55 80 105 130 155 1 3 5 7 9 11 13 15 17 19 21 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTR1P02T1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 300 Ciss 250 C, CAPACITANCE (pF) Crss 200 150 100 50 0 10 VDS = 0 V 5 -VGS 0 -VDS VGS = 0 V 5 10 Ciss TJ = 25C 6 QT 4.5 VDS Q1 3 VGS 1.5 ID = -1 A TJ = 25C 0 0 0.5 1 1.5 2 QG, TOTAL GATE CHARGE (nC) Q2 Coss Crss 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 IS, SOURCE CURRENT (AMPS) VDD = -15 V ID = -1 A VGS = -5 V t, TIME (ns) tr 10 td(off) td(on) 1.001 0.901 0.801 0.701 0.601 0.501 0.401 0.301 0.201 0.101 0.001 2.0E-01 3.0E-01 4.0E-01 5.0E-01 6.0E-01 7.0E-01 VGS = 0 V TJ = 25C tf 1 1 10 RG, GATE RESISTANCE (W) 100 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTR1P02T1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AJ A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 3 1 2 B S V G C D H K J DIM A B C D G H J K L S V STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches http://onsemi.com 5 NTR1P02T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTR1P02T1/D |
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